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電子・光・磁性材料（電子光学）分野の英文校正サンプル
エナゴは、電子光学分野でも多くの論文を校正し、高い評価をいただいてきました。固体物理学と化学、電子工学と化学工学、および材料科学の基本原理などが複合的に関係する電子光学のほか、材料科学、半導体（セミコンダクター）などの幅広い知識を有する校正者が、専門的な見識を踏まえた校閲・校正を行います。こちらが電子光学論文の修正履歴付き校正サンプルです。アドバンス英文校正とノーマル英文校正の２つのサービスプランを比較いただき、各種サンプルをPDF形式でダウンロードすることもできます。
All material in this document is the intellectual property of Crimson Interactive Pvt. Ltd. The use of informationand content in this document in whole or in part is forbidden unless express permission has been given inwriting by Crimson Interactive Pvt. Ltd.www.enago.com | www.enago.jp | www.enago.com.tr | www.enago.com.br | www.enago.de |www.enago.tw | www.enago.cn | www.enago.co.kr | www.enago.ruFigure 4, shows a CTSe thin film the X-ray powder diffraction (XRD) pattern of a thin CTSefilm obtained prepared by through sequential deposition of thin films of CuSe and SnSe thinfilms, with using a preparation routine like one plottedshown in Fig. 3 and with evaporatedmasses of Cu and Sn of 0.01 and 0.07 g, respectively. The Figure 4 also showed shows theXRD patterns for films of CuSe and SnSe films . Thesey are XRD patterns were comparedwith the CTSe diffractogrammy in order to get identify the reflections corresponding tosecondary phases in the thin CTSe films with a greater degree of accuracy the reflectionscorresponding to secondary phases in the thin CTSe films.Cu2SnSe3 thin films were grown with using a method based on sequential evaporation of thinfilms of CuSe, and SnSe thin films in a two two-stage process. Characterization doneperformed by XRD gave evidence of theproved the formation of a compound formationcontaining predominantly the Cu2SnSe3 phase;, however, the sequence with in which thebinary precursors are evaporated and the preparation parameters, more significantly affectsthe phase formation as well as the structural, optical, and electrical transportation propertiesof the thin CTSe films. Moreover oOptical characterization performed byusing spectraltransmittance measurements revealed that the CTSe films have low transmittance and alsopoor crystallographic quality, probably associated to structural and native defects, indicatingthat further studies must be done performed to improve CTSe films properteisproperties.Furthermore, The the results revealed demonstrated that characterize of the Cu2SnSe3 films iscould be potentially used for a done to get p–-type conductivity semiconductor and with anenergy band gap (Eg) of approximatelysomewhat 1.6 eV also.Comment [A1]: The simple present tense isused when referring to Figures/Tables presentin text.Comment [A2]: Choosing the right technicalwords to convey meaning eases readabilityand understanding and maintains technicalaccuracy.Comment [A3]: To create an easy flow ofideas, transition words such as however,therefore, and moreover can be used. Thisusage enhances coherence of ideas in theparagraph and the manuscript on the whole.
All material in this document is the intellectual property of Crimson Interactive Pvt. Ltd. The use of informationand content in this document in whole or in part is forbidden unless express permission has been given inwriting by Crimson Interactive Pvt. Ltd.www.enago.com | www.enago.jp | www.enago.com.tr | www.enago.com.br | www.enago.de |www.enago.tw | www.enago.cn | www.enago.co.kr | www.enago.ruTemperature-dependent Conductivity conductivity measurements on temperature dependencerevealed that the conductivitiesy of the CTSe films were is predominantly affected with bythe transport of free carriers transport in states of the valence band. In high temperaturesranges (T > 550 K), the increase of σ could be attributed to an the increase of in the carrierdensityies coming originating from deep acceptor impurities, whereas the change of σobserved in the low temperatures range (T < 350 K) can be attributed to a changes of in thecarrier density of carrier coming originating from shallow acceptor impurities associated towith secondary phases.Comment [A4]: Omission of words that arenecessary to meaning will result in failedcommunication. Omissions are common incolloquial English; however, these should notbe carried over to written English. Forexample: The trouble was the paper had notbeen submitted. (incorrect); The trouble wasthat the paper had not been submitted.(Correct)
All material in this document is the intellectual property of Crimson Interactive Pvt. Ltd. The use of informationand content in this document in whole or in part is forbidden unless express permission has been given inwriting by Crimson Interactive Pvt. Ltd.www.enago.com | www.enago.jp | www.enago.com.tr | www.enago.com.br | www.enago.de |www.enago.tw | www.enago.cn | www.enago.co.kr | www.enago.ruFigure 4, shows a CTSe thin film the XRD pattern of a thin CTSe film obtained by throughsequential deposition of thin films of CuSe and SnSe, with using a preparation routine like asone that plotted in Fig. 3 and with evaporated masses of Cu and Sn of 0.01 and 0.07 g,respectively. The Figure 4 also showed shows the XRD patterns for films of CuSe and SnSefilms . Thesey are were compared with the CTSe diffractogrammy in order to get obtain witha greater degree of accuracy the reflections corresponding to secondary phases in the thinCTSe films with a greater degree of accuracy.Cu2SnSe3 thin films were grown with using a method based on sequential evaporation of thinfilms of CuSe, and SnSe in a two two-stage process. Characterization done performed byXRD gave evidence of theproved the formation of a compound formation containingpredominantly the Cu2SnSe3 phase;, however, the sequence with in which the binaryprecursors are evaporated and the preparation parameters, more significantly affects the phaseas well as the structural, optical, and electrical transportation properties of the thin CTSefilms. Moreover oOptical characterization performed by spectral transmittance measurementsrevealed that the CTSe films have low transmittance and also poor crystallographic quality,probably associated to structural and native defects, indicating that further studies must bedone to improve CTSe films properteisproperties. Furthermore, The the results revealed thatcharacterize of the Cu2SnSe3 films is could be characterized done to get obtain p-–typeconductivity and with an energy band gap (Eg) of aroundsomewhat 1.6 eV also.Temperature-dependent Conductivity conductivity measurements on temperature dependencerevealed that the conductivitiesy of the CTSe films were is predominantly affected with byComment [A1]: The simple present tense isused when referring to Figures/Tables presentin text.Comment [A2]: Choosing the right technicalwords to convey meaning eases readabilityand understanding and maintains technicalaccuracy.Comment [A3]: To create an easy flow ofideas, transition words such as however,therefore, moreover, etc. can be used. Thisusage enhances coherence of ideas in theparagraph and the manuscript on the whole.
All material in this document is the intellectual property of Crimson Interactive Pvt. Ltd. The use of informationand content in this document in whole or in part is forbidden unless express permission has been given inwriting by Crimson Interactive Pvt. Ltd.www.enago.com | www.enago.jp | www.enago.com.tr | www.enago.com.br | www.enago.de |www.enago.tw | www.enago.cn | www.enago.co.kr | www.enago.ruthe free carrier transport in states of the valence band. In high temperatures ranges (T > 550K), the increase of σ could be attributed to an the increase of in the carrier densityies comingoriginating from deep acceptor impurities, whereas the change of σ observed in the lowtemperatures range (T < 350 K) can be attributed to a changes of in the carrier density ofcarrier coming originating from shallow acceptor impurities associated to with secondaryphases.
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